BIFACIAL (N+/P/P+) SILICON SOLAR CELL BASE THICKNESS OPTIMIZATION, WHILE ILLUMINATED BY THE REAR FACE WITH MONOCHROMATIC LIGHT OF SHORTWAVELENGTHS

The monochromatic absorption coefficient of silicon, inducing the depth penetration light into base solar cell, is used through back surface recombination velocity expressions, to determine optimum thickness necessary for production a large photocurrent. absorption-generation-diffusion and (bulk surface) phenomena are taken account in determining an n+ -p-p+ bifacial it manufacture process optimization.